File:Silky semiconductor.jpg

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English: UV microscope image of a 100 nm thick ZnSe semiconductor layer exfoliated using Epitaxial Lift-Off (ELO). The wrinkles on the surface are formed as a result of strain release (The ZnSe layer was initially grown on top of a MgS release layer under slight compressive strain using Molecular Beam Epitaxy (MBE). [Image produced at Heriot-Watt University, while working with Richard Moug and Kevin Prior]
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Author Akhil Rajan

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Date/TimeThumbnailDimensionsUserComment
current16:18, 3 November 2015Thumbnail for version as of 16:18, 3 November 20151,388 × 1,040 (340 KB)Akhil UoN (talk | contribs)User created page with UploadWizard

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