Triethylindium: Difference between revisions
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:{{chem|In|Br|3}} + 3 {{chem|C|2|H|5|Mg|Br}} → In(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub> + 3 {{chem|Mg|Br|2}} |
:{{chem|In|Br|3}} + 3 {{chem|C|2|H|5|Mg|Br}} → In(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub> + 3 {{chem|Mg|Br|2}} |
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Other routes are also known.<ref>{{cite |
Other routes are also known.<ref>{{cite | last1= Foster | first1=Douglas F. | last2= Cole-Hamilton|first2=David J. | title=Electronic Grade Alkyls of Group 12 and 13 Elements|page =29 66|volume=31|year=1997|doi=10.1002/9780470132623.ch7}}</ref> |
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==Properties== |
==Properties== |
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==Applications== |
==Applications== |
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Indium triethyl is used to prepare [[indium phosphide]] layers for [[microelectronics]].<ref>{{cite book|last1=Sakaki|first1=H.|last2=Woo|first2=J.C.|last3=Yokoyama|first3=N.|last4=Harayama|first4=Y.|title=Compound Semiconductors: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998|date=1999|publisher=[[CRC Press]]|isbn=978- |
Indium triethyl is used to prepare [[indium phosphide]] layers for [[microelectronics]].<ref>{{cite book|last1=Sakaki|first1=H.|last2=Woo|first2=J.C.|last3=Yokoyama|first3=N.|last4=Harayama|first4=Y.|title=Compound Semiconductors: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998|date=1999|publisher=[[CRC Press]]|isbn=978-|page=529|url=https://books.google.com/books?id=K4FZFlqv6YsC&pg=PA529}}</ref> |
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==See also== |
==See also== |
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Latest revision as of 09:13, 1 March 2024
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| Names | |
|---|---|
| IUPAC name
Triethylindium
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| Other names
Indium triethyl, triethylindigane, indiumtriethyl, TEI, TEIn
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| Identifiers | |
3D model (JSmol)
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| ChemSpider | |
| ECHA InfoCard | 100.011.905 |
PubChem CID
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CompTox Dashboard (EPA)
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| Properties | |
| C6H15In | |
| Molar mass | 202.004 g·mol−1 |
| Appearance | Colorless liquid |
| Boiling point | 144 °C (291 °F; 417 K) |
| Hazards | |
| GHS labelling: | |
 
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| Danger | |
| H250, H314 | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Triethylindium is an
organometallic compound. Its chemical formula is C
6H
15In.[1][2]
Synthesis
[edit]This compound can be obtained by reacting indium(III) bromide with a diethyl ether solution of Ethylmagnesium bromide:
- InBr
3 + 3 C
2H
5MgBr → In(C2H5)3 + 3 MgBr
2
Other routes are also known.[3]
Properties
[edit]Indium triethyl is a colorless, toxic, oxidation and hydrolysis-sensitive liquid. It is a monomer in the gaseous and dissolved state. The compound reacts with halomethanes to form diethyl indium halides.[4]
Triethylindium is highly reactive with water:
- In(C2H5)3 + H
2O → In(C2H5)2OH + C
2H
6↑
Applications
[edit]Indium triethyl is used to prepare indium phosphide layers for microelectronics.[5]
See also
[edit]References
[edit]- ^ "INDIUM TRIETHYL". chemicalbook.com. Retrieved 7 June 2017.
- ^ "Substance Name: Indium, triethyl". chem.nlm.nih.gov. Retrieved 7 June 2017.
- ^ Foster, Douglas F.; Cole-Hamilton, David J. (1997). "Electronic Grade Alkyls of Group 12 and 13 Elements". Inorganic Syntheses. Vol. 31. p. 29 66. doi:10.1002/9780470132623.ch7. ISBN 978-0-471-15288-0.
- ^ Maeda, Takayoshi; Tada, Hisashi; Yasuda, Kiyoshi; Okawara, Rokuro (11 September 1970). "Reactions of triethylindium with halomethanes: preparations and properties of diethylindium halides". Journal of Organometallic Chemistry. 27 (1): 13–18. doi:10.1016/S0022-328X(00)82987-3.
- ^ Sakaki, H.; Woo, J.C.; Yokoyama, N.; Harayama, Y. (1999). Compound Semiconductors: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998. CRC Press. p. 529. ISBN 978-0-7503-0611-9.